M. Ishikawa, Y. Saito, and K. Hamaya, "Study of spin transport and magnetoresistance effect in silicon-based lateral spin devices for spin-MOSFET applications" J. Mag. Soc. Jpn. 44, 56-63 (2020)
M. Ishikawa, M. Tsukahara, S. Honda, Y. Fujita, M. Yamada, Y. Saito, T. Kimura, H. Itoh, and K. Hamaya, “Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices” J. Phys. D: Appl. Phys. 52, 085102 (2019)
H. Yoda, Y. Ohsawa, Y. Kato, N. Shimomura, M. Shimizu, K. Koi, S. Shirotori, T. Inokuchi, H. Sugiyama, S. Oikawa, B. Altansargai, M. Ishikawa, and A. Kurobe, “From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption” Journal of Magnetics 24, 107-111 (2019)
M. Ishikawa, M. Tsukahara, M. Yamada, Y. Saito, and K. Hamaya, “Local magnetoresistance at room temperature in Si<100> devices” IEEE Trans. Magn. 54, 8412558 (2018)
Y. Kato, Y. Saito, H. Yoda, T. Inokuchi, S. Shirotori, N. Shimomura, S. Oikawa, A. Tiwari, M. Ishikawa, M. Shimizu, B. Altansargai, H. Sugiyama, K. Koi, and A. Kurobe, "Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta-B Spin Hall Electrode" Phys. Rev. Appl. 10, 044011 (2018)
Y. Ohsawa, H. Yoda, N. Shimomura, S. Shirotori, S. Fujita, K. Koi, A. Buyandalai, S. Oikawa, M. Shimizu, Y. Kato, T. Inokuchi, H. Sugiyama, M. Ishikawa, K. Ikegami, S. Takaya, and A. Kurobe, "Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning" IEEE J. Ele. Dev. Soc. 6, 8531691 (2018)
Y. Kato, H. Yoda, Y. Saito, S. Oikawa, K. Fujii, M. Yoshiki, K. Koi, H. Sugiyama, M. Ishikawa, T. Inokuchi, N. Shimomura, M. Shimizu, S. Shirotori, B. Altansargai, Y. Ohsawa, K. Ikegami, A. Tiwari, and A. Kurobe, “Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system” Appl. Phys. Express 11, 053007 (2018)
M. Shimizu, Y. Ohsawa, H. Yoda, S. Shirotori, B. Altansargai, N. Shimomura, Y. Kato, S. Oikawa, H. Sugiyama, T. Inokuchi, K. Koi, M. Ishikawa, K. Ikegami, A. Tiwari, and A. Kurobe, “Voltage-control spintronics memory (VoCSM) with low write current using highly-selective patterning process” Journal of Magnetics 23, 639-643 (2018)
H. Yoda, N. Shimomura, Y. Ohsawa, Y. Kato, S. Shirotori, M. Shimizu, K. Koi, T. Inokuchi, H. Sugiyama, S. Oikawa, B. Altansargai, M. Ishikawa, A. Tiwari, and A. Kurobe, “The pursuit of saving energy consumption of memory systems by MRAMs, from STT-MRAM to voltage-control spintronics memory (VOCSM)” 2018 IEEE International Magnetic Conference, INTERMAG 2018, 8508840 (2018)
N. Shimomura, H. Yoda, T. Inokuchi, K. Koi, H. Sugiyama, Y. Kato, Y. Oasawa, B. Altansargai, S. Shirotori, S. Oikawa, M. Ishikawa, A. Tiwari, and A. Kurobe, “High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows” IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 8502420-83 (2018)
Y. Ohsawa, H. Yoda, N. Shimomura, S. Shirotori, S. Fujita, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, Y. Kato, T. Inokuchi, H. Sugiyama, M. Ishikawa, A. Tiwari, K. Ikegami, S. Takaya, and A. Kurobe, “Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); The Most Promising Embedded Memory for Deep Learning” 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, 8421494-214 (2018)
M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, and K. Hamaya, “Spin relaxation through lateral spin transport in heavily doped n-type silicon” Phys. Rev. B 95, 115302-1~6 (2017)
Y. Saito, T. Inokuchi, M. Ishikawa, T. Ajay, and H. Sugiyama, “Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer” AIP Advances 7, 055937 (2017)
T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, B. Altansargai, A. Tiwari, Y. Ohsawa, Y. Saito, and A. Kurobe, “Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height” Appl. Phys. Lett. 110, 252404 (2017)
S. Shirotori, H. Yoda, Y. Ohsawa, N. Shimomura, T. Inokuchi, Y. Kato, Y. Kamiguchi, K. Koi, K. Ikegami, H. Sugiyama, M. Shimizu, B. Altansargai, S. Oikawa, M. Ishikawa, A. Tiwari, Y. Saito, and A. Kurobe, “Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode” IEEE Trans. Magn. 53, 3401104 (2017)
H. Yoda, H. Sugiyama, T. Inokuchi, Y. Kato, Y. Ohsawa, K. Abe, N. Shimomura, Y. Saito, S. Shirotori, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, Y. Kamiguchi, S Fujita, and A. Kurobe, “High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM)” IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 8502420-83 (2017)
A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka, and Y. Saito, “Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si on insulator devices” Jpn. J. Appl. Phys. 56, 04CD05 (2017)
H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, N. Shimomura, Y. Saito, and A. Kurobe, “High-speed voltage-control spintronics memory focused on reduction in write current” 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings, 1 (2017)
T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito, “Dependence of spin-dependent transport signals on measurement frequency in CoFe/MgO/n+-Si junctions” Intermag2015, 7157504 (2017)
H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, and A. Kurobe, “Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density” Technical Digest - International Electron Devices Meeting, IEDM, 7838495 (2017)
A. Tiwari, T. Inokuchi, M. Ishikawa, H. Sugiyama, N. Tezuka, and Y. Saito, “Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator devices” AIP Advances 6, 75119 (2016)
T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito, “Spin-dependent transport mechanisms in CoFe/MgO/n+-Si junctions investigated by frequency response of signals” Appl. Phys. Express 9,073002-1~4 (2016)
M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, and Y. Saito, Spin transport and accumulation in n+-Si using Heusler compound Co2FeSi/MgO tunnel contacts” Appl. Phys. Lett. 107, 092402-1~5 (2015)
Y. Saito, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, and N. Tezuka, “Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions” J. Appl. Phys. 117, 17C707-1~4 (2015)
T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Tanamoto, and Y. Saito, “Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n+-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy” Appl. Phys. Lett. 105, 232401-1~5 (2014)
T. Tanamoto, M. Ishikawa, T. Inokuchi, H. Sugiyama, and Y. Saito, “Effects of interface electric field on the magnetoresistance in spin devices” J. Appl. Phys. 115, 163907-1~7 (2014)
H. Sugiyama, M. Ishikawa, T. Inokuchi, T. Tanamoto, Y. Saito, and N. Tezuka, “Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices” Solid State Commun. 190, 49~52 (2014)
T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito, “Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves” J. Appl. Phys. 115, 17C514 (2014)
M. Ishikawa, H. Sugiyama, T. Inokuchi, T. Tanamoto, K. Hamaya, N. Tezuka, and Y. Saito, “Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices” J. Appl. Phys. 114, 243904-1~6 (2013)
T. Tanamoto, H. Sugiyama, T. Inokuchi, M. Ishikawa, and Y. Saito, “Effects of interface resistance asymmetry on local and non-local magnetoresistance structures” Jpn. J. Appl. Phys. 52, 04CM03 (2013)
M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, and Y. Saito, “Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon” Appl. Phys. Lett. 100, 252404-1~4 (2012)
Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, and N. Tezuka, “Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/Tunnel barrier/SOI devices” IEEE Trans. Magn. 48, 6332916 (2012)
T. Inokuchi, M. Ishikawa, H. Sugiyama, Y. Saito, and N. Tezuka, “Spin injection and detection between CoFe/AlOx junctions and SOI investigated by Hanle effect measurements” J. Appl. Phys. 111, 07C316 (2012)
Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, and T. Tanamoto, “Spin-based MOSFET and its applications” ECS Trans. 158, H1068~H1076 (2011)
Y. Saito, T. Inokuchi, M. Ishikawa, H. Sugiyama, T. Marukame, and T. Tanamoto, “Spin-based MOSFET and its applications” ECS Transactions 37, 1-217~228 (2011)
Y. Saito, T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, and T. Tanamoto, “Spin injection, transport, and read/write operation in spin-based MOSFET” Thin Solid Films 519, 8266 (2011)
T. Tanamoto, H. Sugiyama, T. Inokuchi, T. Marukame, M. Ishikawa, K. Ikegami, and Y. Saito, “Scalability of spin field programmable gate arrary: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor” J. Appl. Phys. 109, 07C312 (2011)
T. Inokuchi,T. Marukame, T. Tanamoto, H. Sugiyama, M. Ishikawa, and Y. Saito, “Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits” Digest of Technical Papers - Symposium on VLSI Technology, 5556194-119~120 (2010)
T. Inokuchi, T. Marukame, H. Sugiyama, M. Ishikawa, and Y. Saito, “Electrical spin injection into n-GaAs channels and detection through MgO/CoFeB electrodes” Appl. Phys. Express 2, 23006 (2009)
T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito, “Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices” Technical Digest - International Electron Devices Meeting, IEDM, 5424385 (2009)
J. Takaobushi, M. Ishikawa, S. Ueda, E. Ikenaga, J.-J. Kim, M. Kobata, Y. Takeda, Y. Saitoh, M. Yanashi, Y. Nishino, D. Miwa, K. Tamasaku, T. Ishikawa, I. Satoh, H. Tanaka, K. Kobayashi, and T. Kawai, “Electronic structures of Fe3-xMxO4 (M=Mn, Zn) spinel oxide thin films investigated by x-ray photoemission spectroscopy and x-ray magnetic circular dichroism” Phys. Rev. B 76, 205108-1~6 (2007)
L. Pellegrino, Y. Yanagisawa, M. Ishikawa, T. Matsumoto, H. Tanaka, T. Kawai, “(Fe,Mn)3O4 nanochannels fabricated by AFM local-oxidation nanolithography using Mo/poly(methyl methacrylate) nanomasks” Adv. Mater. 18, 3099 (2006)
L. Pellegrino, I. Pallecchi, E. Bellinger, G. Canu, A.S. Siri, D. Marré, Y. Yanagisawa, M. Ishikawa, T. Matsumoto, H. Tanaka, and T. Kawai, “AFM nanopatterning of transition metal oxide thin films” J. Nanosci. Nanotechnol. 10, 4471 (2010)
M. Ishikawa, H. Tanaka, and T. Kawai, “Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique” Appl. Phys. Lett. 86, 222504-1~3 (2005)